double polysilicon gate MOS process
- double polysilicon gate MOS process
- MOP darinių su dvipakopėmis polikristalinio silicio užtūromis technologija
statusas T sritis radioelektronika
atitikmenys: angl. double polysilicon gate MOS process
vok. Doppel-Poly-Si-Gate-MOS-Technik, f
rus. технология МОП-структур с двухуровневыми поликремниевыми затворами, f
pranc. technologie MOS pour circuit intégré à grille polysilicium à deux niveaux, f
Radioelektronikos terminų žodynas. – Vilnius : BĮ UAB „Litimo“.
Kazimieras Gaivenis, Gytis Juška, Vidas Kalesinskas.
2000.
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